SIA427ADJ-T1-GE3

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Part No :: SIA427ADJ-T1-GE3

Manufacturer: Vishay / Siliconix

Description: MOSFET P-CH 8V 12A PPAK SC70-6

Catalog: Transistors - FETs, MOSFETs - Single

Shipped from: HK warehouse

Expected Shipping Date: Jul 20 - Jul 24 2025

DataSheet: SIA427ADJ-T1-GE3 PDF

Availability: 6241 pieces

Unit Price: ~~$0.58000~~

Current price of SIA427ADJ-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

SIA427ADJ-T1-GE3 Specifications

Type	Description
Series:	TrenchFET®
Package:	Tape & Reel (TR)Cut Tape (CT)
Part Status:	Active
FET Type:	P-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	8 V
Current - Continuous Drain (Id) @ 25°C:	12A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	1.2V, 4.5V
Rds On (Max) @ Id, Vgs:	16mOhm @ 8.2A, 4.5V
Vgs(th) (Max) @ Id:	800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	50 nC @ 5 V
Vgs (Max):	±5V
Input Capacitance (Ciss) (Max) @ Vds:	2300 pF @ 4 V
FET Feature:	-
Power Dissipation (Max):	19W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	PowerPAK® SC-70-6 Single
Package / Case:	PowerPAK® SC-70-6

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