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SIHD6N62E-GE3

SIHD6N62E-GE3

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Part No :

SIHD6N62E-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 620V 6A DPAK
Catalog
Transistors - FETs, MOSFETs - Single
Shipped from
HK warehouse
Expected Shipping Date
Jul 01 - Jul 05 2025
DataSheet
SIHD6N62E-GE3 PDF
Availability
2987 pieces
Unit Price
$1.71000

Current price of SIHD6N62E-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

SIHD6N62E-GE3 Specifications
Type Description
Series:-
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):-
Current - Continuous Drain (Id) @ 25°C:6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:900mOhm @ 3A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:34 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:578 pF @ 100 V
FET Feature:-
Power Dissipation (Max):78W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D-PAK (TO-252AA)
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
  • Please confirm the specifications of the products when ordering.
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  • Please confirm with the logistics company in advance if you are in a remote area. (It may cost extra fees (35-50 USD) for delivery at those areas.)
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped. (It may take up to 24 hours before carriers display the info.)
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