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TP2635N3-G

TP2635N3-G

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Part No :

TP2635N3-G

Manufacturer
Roving Networks / Microchip Technology
Description
MOSFET P-CH 350V 180MA TO92-3
Catalog
Transistors - FETs, MOSFETs - Single
Shipped from
HK warehouse
Expected Shipping Date
Jul 02 - Jul 06 2025
DataSheet
TP2635N3-G PDF
Availability
98 pieces
Unit Price
$1.55000

Current price of TP2635N3-G is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

TP2635N3-G Specifications
Type Description
Series:-
Package:Bulk
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):350 V
Current - Continuous Drain (Id) @ 25°C:180mA (Tj)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 10V
Rds On (Max) @ Id, Vgs:15Ohm @ 300mA, 10V
Vgs(th) (Max) @ Id:2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:-
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:300 pF @ 25 V
FET Feature:-
Power Dissipation (Max):1W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-92-3
Package / Case:TO-226-3, TO-92-3 (TO-226AA)
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
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