NP50P06KDG-E1-AY

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Part No :: NP50P06KDG-E1-AY

Manufacturer: Renesas Electronics America

Description: MOSFET P-CH 60V 50A TO263

Catalog: Transistors - FETs, MOSFETs - Single

Shipped from: HK warehouse

Expected Shipping Date: Jul 29 - Aug 02 2025

DataSheet: NP50P06KDG-E1-AY PDF

Availability: 0 pieces

Unit Price: ~~$1.30928~~

Current price of NP50P06KDG-E1-AY is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

NP50P06KDG-E1-AY Specifications

Type	Description
Series:	-
Package:	Tape & Reel (TR)
Part Status:	Active
FET Type:	P-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	60 V
Current - Continuous Drain (Id) @ 25°C:	50A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	17mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:	2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:	95 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	5000 pF @ 10 V
FET Feature:	-
Power Dissipation (Max):	1.8W (Ta), 90W (Tc)
Operating Temperature:	175°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	TO-263
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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