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IPD122N10N3GATMA1

IPD122N10N3GATMA1

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Part No :

IPD122N10N3GATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 100V 59A TO252-3
Catalog
Transistors - FETs, MOSFETs - Single
Shipped from
HK warehouse
Expected Shipping Date
May 17 - May 21 2024
DataSheet
IPD122N10N3GATMA1 PDF
Availability
34187 pieces
Unit Price
$1.55000

Due to the large price fluctuation in 2021-2022, please send an inquiry to get the latest quotation, The current price of IPD122N10N3GATMA1 is for reference only, if you want to get the best price, please submit an inquiry or email directly to our sales team [email protected]

IPD122N10N3GATMA1 Specifications
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:59A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:12.2mOhm @ 46A, 10V
Vgs(th) (Max) @ Id:3.5V @ 46µA
Gate Charge (Qg) (Max) @ Vgs:35 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2500 pF @ 50 V
FET Feature:-
Power Dissipation (Max):94W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO252-3
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
  • Please confirm the specifications of the products when ordering.
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
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