IPA65R1K5CEXKSA1

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Part No :: IPA65R1K5CEXKSA1

Manufacturer: IR (Infineon Technologies)

Description: MOSFET N-CH 650V 5.2A TO220

Catalog: Transistors - FETs, MOSFETs - Single

Shipped from: HK warehouse

Expected Shipping Date: Jul 29 - Aug 02 2025

DataSheet: IPA65R1K5CEXKSA1 PDF

Availability: 0 pieces

Unit Price: ~~$0.55040~~

Current price of IPA65R1K5CEXKSA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

IPA65R1K5CEXKSA1 Specifications

Type	Description
Series:	CoolMOS™
Package:	Tube
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	650 V
Current - Continuous Drain (Id) @ 25°C:	5.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	1.5Ohm @ 1A, 10V
Vgs(th) (Max) @ Id:	3.5V @ 130µA
Gate Charge (Qg) (Max) @ Vgs:	10.5 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	225 pF @ 100 V
FET Feature:	Super Junction
Power Dissipation (Max):	30W (Tc)
Operating Temperature:	-40°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	PG-TO220 Full Pack
Package / Case:	TO-220-3 Full Pack

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