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BSC019N02KSGAUMA1

BSC019N02KSGAUMA1

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Part No :

BSC019N02KSGAUMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 20V 30A/100A TDSON
Catalog
Transistors - FETs, MOSFETs - Single
Shipped from
HK warehouse
Expected Shipping Date
Aug 02 - Aug 06 2025
DataSheet
BSC019N02KSGAUMA1 PDF
Availability
0 pieces
Unit Price
$1.21958

Current price of BSC019N02KSGAUMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

BSC019N02KSGAUMA1 Specifications
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)
Part Status:Not For New Designs
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:30A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:1.95mOhm @ 50A, 4.5V
Vgs(th) (Max) @ Id:1.2V @ 350µA
Gate Charge (Qg) (Max) @ Vgs:85 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:13000 pF @ 10 V
FET Feature:-
Power Dissipation (Max):2.8W (Ta), 104W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TDSON-8-1
Package / Case:8-PowerTDFN
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
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