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BSC100N10NSFGATMA1

BSC100N10NSFGATMA1

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Part No :

BSC100N10NSFGATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 100V 11.4/90A 8TDSON
Catalog
Transistors - FETs, MOSFETs - Single
Shipped from
HK warehouse
Expected Shipping Date
Jul 09 - Jul 13 2025
DataSheet
BSC100N10NSFGATMA1 PDF
Availability
0 pieces
Unit Price
$2.07000

Current price of BSC100N10NSFGATMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

BSC100N10NSFGATMA1 Specifications
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:11.4A (Ta), 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:10mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:4V @ 110µA
Gate Charge (Qg) (Max) @ Vgs:44 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2900 pF @ 50 V
FET Feature:-
Power Dissipation (Max):156W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TDSON-8-1
Package / Case:8-PowerTDFN
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
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