IPSA70R2K0CEAKMA1

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Part No :: IPSA70R2K0CEAKMA1

Manufacturer: IR (Infineon Technologies)

Description: MOSFET N-CH 700V 4A TO251-3

Catalog: Transistors - FETs, MOSFETs - Single

Shipped from: HK warehouse

Expected Shipping Date: Jul 09 - Jul 13 2025

DataSheet: IPSA70R2K0CEAKMA1 PDF

Availability: 0 pieces

Unit Price: ~~$0.28015~~

Current price of IPSA70R2K0CEAKMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

IPSA70R2K0CEAKMA1 Specifications

Type	Description
Series:	-
Package:	Tube
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	700 V
Current - Continuous Drain (Id) @ 25°C:	4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	2Ohm @ 1A, 10V
Vgs(th) (Max) @ Id:	3.5V @ 70µA
Gate Charge (Qg) (Max) @ Vgs:	7.8 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	163 pF @ 100 V
FET Feature:	-
Power Dissipation (Max):	42W (Tc)
Operating Temperature:	-40°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	PG-TO251-3
Package / Case:	TO-251-3 Short Leads, IPak, TO-251AA

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