SI2306BDS-T1-E3

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Part No :: SI2306BDS-T1-E3

Manufacturer: Vishay / Siliconix

Description: MOSFET N-CH 30V 3.16A SOT23-3

Catalog: Transistors - FETs, MOSFETs - Single

Shipped from: HK warehouse

Expected Shipping Date: Aug 02 - Aug 06 2025

DataSheet: SI2306BDS-T1-E3 PDF

Availability: 5982 pieces

Unit Price: ~~$0.65000~~

Current price of SI2306BDS-T1-E3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

SI2306BDS-T1-E3 Specifications

Type	Description
Series:	TrenchFET®
Package:	Tape & Reel (TR)Cut Tape (CT)
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	30 V
Current - Continuous Drain (Id) @ 25°C:	3.16A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	47mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id:	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	4.5 nC @ 5 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	305 pF @ 15 V
FET Feature:	-
Power Dissipation (Max):	750mW (Ta)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	SOT-23-3 (TO-236)
Package / Case:	TO-236-3, SC-59, SOT-23-3

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