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IMW120R350M1HXKSA1

IMW120R350M1HXKSA1

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Part No :

IMW120R350M1HXKSA1

Manufacturer
IR (Infineon Technologies)
Description
SICFET N-CH 1.2KV 4.7A TO247-3
Catalog
Transistors - FETs, MOSFETs - Single
Shipped from
HK warehouse
Expected Shipping Date
Aug 03 - Aug 07 2025
DataSheet
IMW120R350M1HXKSA1 PDF
Availability
160 pieces
Unit Price
$7.23000

Current price of IMW120R350M1HXKSA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

IMW120R350M1HXKSA1 Specifications
Type Description
Series:CoolSiC™
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):1.2 kV
Current - Continuous Drain (Id) @ 25°C:4.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):15V, 18V
Rds On (Max) @ Id, Vgs:455mOhm @ 2A, 18V
Vgs(th) (Max) @ Id:5.7V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:5.3 nC @ 18 V
Vgs (Max):+23V, -7V
Input Capacitance (Ciss) (Max) @ Vds:182 pF @ 800 V
FET Feature:-
Power Dissipation (Max):60W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO247-3-41
Package / Case:TO-247-3
  • Please confirm the specifications of the products when ordering.
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
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