SI1062X-T1-GE3

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Part No :: SI1062X-T1-GE3

Manufacturer: Vishay / Siliconix

Description: MOSFET N-CH 20V SC89-3

Catalog: Transistors - FETs, MOSFETs - Single

Shipped from: HK warehouse

Expected Shipping Date: Jul 28 - Aug 01 2025

DataSheet: SI1062X-T1-GE3 PDF

Availability: 2680 pieces

Unit Price: ~~$0.47000~~

Current price of SI1062X-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

SI1062X-T1-GE3 Specifications

Type	Description
Series:	TrenchFET®
Package:	Tape & Reel (TR)Cut Tape (CT)
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	20 V
Current - Continuous Drain (Id) @ 25°C:	530mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):	1.5V, 4.5V
Rds On (Max) @ Id, Vgs:	420mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id:	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	2.7 nC @ 8 V
Vgs (Max):	±8V
Input Capacitance (Ciss) (Max) @ Vds:	43 pF @ 10 V
FET Feature:	-
Power Dissipation (Max):	220mW (Ta)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	SC-89-3
Package / Case:	SC-89, SOT-490

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