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TK6Q65W,S1Q

TK6Q65W,S1Q

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Part No :

TK6Q65W,S1Q

Manufacturer
Toshiba Electronic Devices and Storage Corporation
Description
MOSFET N-CH 650V 5.8A IPAK
Catalog
Transistors - FETs, MOSFETs - Single
Shipped from
HK warehouse
Expected Shipping Date
May 17 - May 21 2024
DataSheet
TK6Q65W,S1Q PDF
Availability
0 pieces
Unit Price
$1.13040

Due to the large price fluctuation in 2021-2022, please send an inquiry to get the latest quotation, The current price of TK6Q65W,S1Q is for reference only, if you want to get the best price, please submit an inquiry or email directly to our sales team [email protected]

TK6Q65W,S1Q Specifications
Type Description
Series:DTMOSIV
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:5.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.05Ohm @ 2.9A, 10V
Vgs(th) (Max) @ Id:3.5V @ 180µA
Gate Charge (Qg) (Max) @ Vgs:11 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:390 pF @ 300 V
FET Feature:-
Power Dissipation (Max):60W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I-PAK
Package / Case:TO-251-3 Stub Leads, IPak
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
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