IPD90N04S4L04ATMA1

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Part No :: IPD90N04S4L04ATMA1

Manufacturer: IR (Infineon Technologies)

Description: MOSFET N-CH 40V 90A TO252-3

Catalog: Transistors - FETs, MOSFETs - Single

Shipped from: HK warehouse

Expected Shipping Date: Jul 29 - Aug 02 2025

DataSheet: IPD90N04S4L04ATMA1 PDF

Availability: 0 pieces

Unit Price: ~~$1.02000~~

Current price of IPD90N04S4L04ATMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

IPD90N04S4L04ATMA1 Specifications

Type	Description
Series:	Automotive, AEC-Q101, OptiMOS™
Package:	Tape & Reel (TR)Cut Tape (CT)
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	40 V
Current - Continuous Drain (Id) @ 25°C:	90A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	3.8mOhm @ 90A, 10V
Vgs(th) (Max) @ Id:	2.2V @ 35µA
Gate Charge (Qg) (Max) @ Vgs:	60 nC @ 10 V
Vgs (Max):	+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds:	4690 pF @ 25 V
FET Feature:	-
Power Dissipation (Max):	71W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	PG-TO252-3-313
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63

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