TK8Q65W,S1Q

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Part No :: TK8Q65W,S1Q

Manufacturer: Toshiba Electronic Devices and Storage Corporation

Description: MOSFET N-CH 650V 7.8A IPAK

Catalog: Transistors - FETs, MOSFETs - Single

Shipped from: HK warehouse

Expected Shipping Date: Jul 04 - Jul 08 2025

DataSheet: TK8Q65W,S1Q PDF

Availability: 7 pieces

Unit Price: ~~$1.64000~~

Current price of TK8Q65W,S1Q is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

TK8Q65W,S1Q Specifications

Type	Description
Series:	DTMOSIV
Package:	Tube
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	650 V
Current - Continuous Drain (Id) @ 25°C:	7.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	670mOhm @ 3.9A, 10V
Vgs(th) (Max) @ Id:	3.5V @ 300µA
Gate Charge (Qg) (Max) @ Vgs:	16 nC @ 10 V
Vgs (Max):	±30V
Input Capacitance (Ciss) (Max) @ Vds:	570 pF @ 300 V
FET Feature:	-
Power Dissipation (Max):	80W (Tc)
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	I-PAK
Package / Case:	TO-251-3 Stub Leads, IPak

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