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Type | Description |
---|---|
Series: | HEXFET® |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 55 V |
Current - Continuous Drain (Id) @ 25°C: | 75A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 8mOhm @ 52A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 60 nC @ 5 V |
Vgs (Max): | ±16V |
Input Capacitance (Ciss) (Max) @ Vds: | 2880 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 130W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-262 |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
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MOSFET N-CH 55V 75A TO262
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