TK7J90E,S1E

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Part No :

TK7J90E,S1E

Manufacturer
Toshiba Electronic Devices and Storage Corporation
Description
MOSFET N-CH 900V 7A TO3P
Catalog
Transistors - FETs, MOSFETs - Single
Shipped from
HK warehouse
Expected Shipping Date
May 21 - May 25 2024
DataSheet
TK7J90E,S1E PDF
Availability
12 pieces
Unit Price
$2.83000

Due to the large price fluctuation in 2021-2022, please send an inquiry to get the latest quotation, The current price of TK7J90E,S1E is for reference only, if you want to get the best price, please submit an inquiry or email directly to our sales team [email protected]

Type Description
Series:π-MOSVIII
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):900 V
Current - Continuous Drain (Id) @ 25°C:7A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2Ohm @ 3.5A, 10V
Vgs(th) (Max) @ Id:4V @ 700µA
Gate Charge (Qg) (Max) @ Vgs:32 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1350 pF @ 25 V
FET Feature:-
Power Dissipation (Max):200W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-3P(N)
Package / Case:TO-3P-3, SC-65-3
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  • Delivery date: usually 2 to 7 working days.
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