TK7J90E,S1E

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Part No :: TK7J90E,S1E

Manufacturer: Toshiba Electronic Devices and Storage Corporation

Description: MOSFET N-CH 900V 7A TO3P

Catalog: Transistors - FETs, MOSFETs - Single

Shipped from: HK warehouse

Expected Shipping Date: Jul 05 - Jul 09 2025

DataSheet: TK7J90E,S1E PDF

Availability: 12 pieces

Unit Price: ~~$2.83000~~

Current price of TK7J90E,S1E is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

TK7J90E,S1E Specifications

Type	Description
Series:	π-MOSVIII
Package:	Tube
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	900 V
Current - Continuous Drain (Id) @ 25°C:	7A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	2Ohm @ 3.5A, 10V
Vgs(th) (Max) @ Id:	4V @ 700µA
Gate Charge (Qg) (Max) @ Vgs:	32 nC @ 10 V
Vgs (Max):	±30V
Input Capacitance (Ciss) (Max) @ Vds:	1350 pF @ 25 V
FET Feature:	-
Power Dissipation (Max):	200W (Tc)
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	TO-3P(N)
Package / Case:	TO-3P-3, SC-65-3

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