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SI2301BDS-T1-GE3

SI2301BDS-T1-GE3

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Part No :

SI2301BDS-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET P-CH 20V 2.2A SOT23-3
Catalog
Transistors - FETs, MOSFETs - Single
Shipped from
HK warehouse
Expected Shipping Date
Jul 30 - Aug 03 2025
DataSheet
SI2301BDS-T1-GE3 PDF
Availability
8204 pieces
Unit Price
$0.53000

Current price of SI2301BDS-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

SI2301BDS-T1-GE3 Specifications
Type Description
Series:TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:2.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:100mOhm @ 2.8A, 4.5V
Vgs(th) (Max) @ Id:950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:10 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:375 pF @ 6 V
FET Feature:-
Power Dissipation (Max):700mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3 (TO-236)
Package / Case:TO-236-3, SC-59, SOT-23-3
  • Please confirm the specifications of the products when ordering.
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
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