TK100L60W,VQ

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Part No :: TK100L60W,VQ

Manufacturer: Toshiba Electronic Devices and Storage Corporation

Description: MOSFET N-CH 600V 100A TO3P

Catalog: Transistors - FETs, MOSFETs - Single

Shipped from: HK warehouse

Expected Shipping Date: Aug 04 - Aug 08 2025

DataSheet: TK100L60W,VQ PDF

Availability: 66 pieces

Unit Price: ~~$33.12000~~

Current price of TK100L60W,VQ is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

TK100L60W,VQ Specifications

Type	Description
Series:	DTMOSIV
Package:	Tube
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	600 V
Current - Continuous Drain (Id) @ 25°C:	100A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	18mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:	3.7V @ 5mA
Gate Charge (Qg) (Max) @ Vgs:	360 nC @ 10 V
Vgs (Max):	±30V
Input Capacitance (Ciss) (Max) @ Vds:	15000 pF @ 30 V
FET Feature:	Super Junction
Power Dissipation (Max):	797W (Tc)
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	TO-3P(L)
Package / Case:	TO-3PL

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