SCTW35N65G2VAG

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Part No :: SCTW35N65G2VAG

Manufacturer: STMicroelectronics

Description: SICFET N-CH 650V 45A HIP247

Catalog: Transistors - FETs, MOSFETs - Single

Shipped from: HK warehouse

Expected Shipping Date: Jul 29 - Aug 02 2025

DataSheet: SCTW35N65G2VAG PDF

Availability: 492 pieces

Unit Price: ~~$14.67000~~

Current price of SCTW35N65G2VAG is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

SCTW35N65G2VAG Specifications

Type	Description
Series:	Automotive, AEC-Q101
Package:	Tube
Part Status:	Active
FET Type:	N-Channel
Technology:	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):	650 V
Current - Continuous Drain (Id) @ 25°C:	45A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	18V, 20V
Rds On (Max) @ Id, Vgs:	67mOhm @ 20A, 20V
Vgs(th) (Max) @ Id:	5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:	73 nC @ 20 V
Vgs (Max):	+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds:	1370 pF @ 400 V
FET Feature:	-
Power Dissipation (Max):	240W (Tc)
Operating Temperature:	-55°C ~ 200°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	HiP247™
Package / Case:	TO-247-3

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