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SIS176LDN-T1-GE3

SIS176LDN-T1-GE3

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Part No :

SIS176LDN-T1-GE3

Manufacturer
Vishay / Siliconix
Description
N-CHANNEL 70 V (D-S) MOSFET POWE
Catalog
Transistors - FETs, MOSFETs - Single
Shipped from
HK warehouse
Expected Shipping Date
May 21 - May 25 2024
DataSheet
SIS176LDN-T1-GE3 PDF
Availability
50 pieces
Unit Price
$0.98000

Due to the large price fluctuation in 2021-2022, please send an inquiry to get the latest quotation, The current price of SIS176LDN-T1-GE3 is for reference only, if you want to get the best price, please submit an inquiry or email directly to our sales team [email protected]

SIS176LDN-T1-GE3 Specifications
Type Description
Series:TrenchFET® Gen IV
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):70 V
Current - Continuous Drain (Id) @ 25°C:12.9A (Ta), 42.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):3.3V, 4.5V
Rds On (Max) @ Id, Vgs:10.9mOhm @ 10A, 4.5V
Vgs(th) (Max) @ Id:1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:19 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:1660 pF @ 35 V
FET Feature:-
Power Dissipation (Max):3.6W (Ta), 39W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerPAK® 1212-8
Package / Case:PowerPAK® 1212-8
  • Please confirm the specifications of the products when ordering.
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped. (It may take up to 24 hours before carriers display the info.)
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