TK6A65D(STA4,Q,M)

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Part No :: TK6A65D(STA4,Q,M)

Manufacturer: Toshiba Electronic Devices and Storage Corporation

Description: MOSFET N-CH 650V 6A TO220SIS

Catalog: Transistors - FETs, MOSFETs - Single

Shipped from: HK warehouse

Expected Shipping Date: Jul 13 - Jul 17 2025

DataSheet: TK6A65D(STA4,Q,M) PDF

Availability: 0 pieces

Unit Price: ~~$1.72420~~

Current price of TK6A65D(STA4,Q,M) is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

TK6A65D(STA4,Q,M) Specifications

Type	Description
Series:	π-MOSVII
Package:	Tube
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	650 V
Current - Continuous Drain (Id) @ 25°C:	6A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	1.11Ohm @ 3A, 10V
Vgs(th) (Max) @ Id:	4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:	20 nC @ 10 V
Vgs (Max):	±30V
Input Capacitance (Ciss) (Max) @ Vds:	1050 pF @ 25 V
FET Feature:	-
Power Dissipation (Max):	45W (Tc)
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	TO-220SIS
Package / Case:	TO-220-3 Full Pack

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