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Type | Description |
---|---|
Series: | POWER MOS V® |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 1200 V |
Current - Continuous Drain (Id) @ 25°C: | 16A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 800mOhm @ 8A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 2.5mA |
Gate Charge (Qg) (Max) @ Vgs: | 485 nC @ 10 V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 7800 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 520W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-264 (L) |
Package / Case: | TO-264-3, TO-264AA |
FIXED IND 6.8NH 140MA 1.6 OHM
CRYSTAL 12.0000MHZ 10PF SMD
MOSFET N-CH 1200V 16A TO264
GW JSL3S1.EM-E1E2-A838-1-100-R18
LED DURIS S5 WHITE SMD