IPB60R165CPATMA1

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Part No :: IPB60R165CPATMA1

Manufacturer: IR (Infineon Technologies)

Description: MOSFET N-CH 600V 21A TO263-3

Catalog: Transistors - FETs, MOSFETs - Single

Shipped from: HK warehouse

Expected Shipping Date: Jul 26 - Jul 30 2025

DataSheet: IPB60R165CPATMA1 PDF

Availability: 4765 pieces

Unit Price: ~~$4.70000~~

Current price of IPB60R165CPATMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

IPB60R165CPATMA1 Specifications

Type	Description
Series:	CoolMOS™
Package:	Tape & Reel (TR)Cut Tape (CT)
Part Status:	Not For New Designs
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	600 V
Current - Continuous Drain (Id) @ 25°C:	21A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	165mOhm @ 12A, 10V
Vgs(th) (Max) @ Id:	3.5V @ 790µA
Gate Charge (Qg) (Max) @ Vgs:	52 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	2000 pF @ 100 V
FET Feature:	-
Power Dissipation (Max):	192W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	PG-TO263-3-2
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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