IPI086N10N3GXKSA1

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Part No :: IPI086N10N3GXKSA1

Manufacturer: IR (Infineon Technologies)

Description: MOSFET N-CH 100V 80A TO262-3

Catalog: Transistors - FETs, MOSFETs - Single

Shipped from: HK warehouse

Expected Shipping Date: Jul 02 - Jul 06 2025

DataSheet: IPI086N10N3GXKSA1 PDF

Availability: 24 pieces

Unit Price: ~~$1.59000~~

Current price of IPI086N10N3GXKSA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

IPI086N10N3GXKSA1 Specifications

Type	Description
Series:	OptiMOS™
Package:	Tube
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	100 V
Current - Continuous Drain (Id) @ 25°C:	80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	6V, 10V
Rds On (Max) @ Id, Vgs:	8.6mOhm @ 73A, 10V
Vgs(th) (Max) @ Id:	3.5V @ 75µA
Gate Charge (Qg) (Max) @ Vgs:	55 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	3980 pF @ 50 V
FET Feature:	-
Power Dissipation (Max):	125W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	PG-TO262-3
Package / Case:	TO-262-3 Long Leads, I²Pak, TO-262AA

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