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IMBG120R140M1HXTMA1

IMBG120R140M1HXTMA1

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Part No :

IMBG120R140M1HXTMA1

Manufacturer
IR (Infineon Technologies)
Description
TRANS SJT N-CH 1.2KV 18A TO263
Catalog
Transistors - FETs, MOSFETs - Single
Shipped from
HK warehouse
Expected Shipping Date
Aug 03 - Aug 07 2025
DataSheet
IMBG120R140M1HXTMA1 PDF
Availability
932 pieces
Unit Price
$12.09000

Current price of IMBG120R140M1HXTMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

IMBG120R140M1HXTMA1 Specifications
Type Description
Series:CoolSiC™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss):1.2 kV
Current - Continuous Drain (Id) @ 25°C:18A (Tc)
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:189mOhm @ 6A, 18V
Vgs(th) (Max) @ Id:5.7V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs:13.4 nC @ 18 V
Vgs (Max):+18V, -15V
Input Capacitance (Ciss) (Max) @ Vds:491 pF @ 800 V
FET Feature:Standard
Power Dissipation (Max):107W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-7-12
Package / Case:TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
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  • Delivery date: usually 2 to 7 working days.
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IMBG120R140M1HXTMA1

IMBG120R140M1HXTMA1

TRANS SJT N-CH 1.2KV 18A TO263

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