FQU1N60CTU

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Part No :: FQU1N60CTU

Manufacturer: Sanyo Semiconductor/ON Semiconductor

Description: MOSFET N-CH 600V 1A IPAK

Catalog: Transistors - FETs, MOSFETs - Single

Shipped from: HK warehouse

Expected Shipping Date: May 21 - May 25 2024

DataSheet: FQU1N60CTU PDF

Availability: 425015120 pieces

Unit Price: ~~$0.72000~~

Due to the large price fluctuation in 2021-2022, please send an inquiry to get the latest quotation, The current price of FQU1N60CTU is for reference only, if you want to get the best price, please submit an inquiry or email directly to our sales team [email protected]

FQU1N60CTU Specifications

Type	Description
Series:	QFET®
Package:	Tube
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	600 V
Current - Continuous Drain (Id) @ 25°C:	1A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	11.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	6.2 nC @ 10 V
Vgs (Max):	±30V
Input Capacitance (Ciss) (Max) @ Vds:	170 pF @ 25 V
FET Feature:	-
Power Dissipation (Max):	2.5W (Ta), 28W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	I-PAK
Package / Case:	TO-251-3 Short Leads, IPak, TO-251AA

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