FQU1N60CTU

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Part No :: FQU1N60CTU

Manufacturer: Sanyo Semiconductor/ON Semiconductor

Description: MOSFET N-CH 600V 1A IPAK

Catalog: Transistors - FETs, MOSFETs - Single

Shipped from: HK warehouse

Expected Shipping Date: Jul 02 - Jul 06 2025

DataSheet: FQU1N60CTU PDF

Availability: 425015120 pieces

Unit Price: ~~$0.72000~~

Current price of FQU1N60CTU is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

FQU1N60CTU Specifications

Type	Description
Series:	QFET®
Package:	Tube
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	600 V
Current - Continuous Drain (Id) @ 25°C:	1A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	11.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	6.2 nC @ 10 V
Vgs (Max):	±30V
Input Capacitance (Ciss) (Max) @ Vds:	170 pF @ 25 V
FET Feature:	-
Power Dissipation (Max):	2.5W (Ta), 28W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	I-PAK
Package / Case:	TO-251-3 Short Leads, IPak, TO-251AA

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