TW070J120B,S1Q

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Part No :: TW070J120B,S1Q

Manufacturer: Toshiba Electronic Devices and Storage Corporation

Description: SICFET N-CH 1200V 36A TO3P

Catalog: Transistors - FETs, MOSFETs - Single

Shipped from: HK warehouse

Expected Shipping Date: Jul 27 - Jul 31 2025

DataSheet: TW070J120B,S1Q PDF

Availability: 273 pieces

Unit Price: ~~$33.97000~~

Current price of TW070J120B,S1Q is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

TW070J120B,S1Q Specifications

Type	Description
Series:	*
Package:	Tube
Part Status:	Active
FET Type:	N-Channel
Technology:	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):	1200 V
Current - Continuous Drain (Id) @ 25°C:	36A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	20V
Rds On (Max) @ Id, Vgs:	90mOhm @ 18A, 20V
Vgs(th) (Max) @ Id:	5.8V @ 20mA
Gate Charge (Qg) (Max) @ Vgs:	67 nC @ 20 V
Vgs (Max):	±25V, -10V
Input Capacitance (Ciss) (Max) @ Vds:	1680 pF @ 800 V
FET Feature:	Standard
Power Dissipation (Max):	272W (Tc)
Operating Temperature:	-55°C ~ 175°C
Mounting Type:	Through Hole
Supplier Device Package:	TO-3P(N)
Package / Case:	TO-3P-3, SC-65-3

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