FDD86113LZ

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Part No :: FDD86113LZ

Manufacturer: Sanyo Semiconductor/ON Semiconductor

Description: MOSFET N-CH 100V 4.2A/5.5A DPAK

Catalog: Transistors - FETs, MOSFETs - Single

Shipped from: HK warehouse

Expected Shipping Date: Aug 02 - Aug 06 2025

DataSheet: FDD86113LZ PDF

Availability: 28052500 pieces

Unit Price: ~~$1.34000~~

Current price of FDD86113LZ is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

FDD86113LZ Specifications

Type	Description
Series:	PowerTrench®
Package:	Tape & Reel (TR)Cut Tape (CT)
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	100 V
Current - Continuous Drain (Id) @ 25°C:	4.2A (Ta), 5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	104mOhm @ 4.2A, 10V
Vgs(th) (Max) @ Id:	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	6 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	285 pF @ 50 V
FET Feature:	-
Power Dissipation (Max):	3.1W (Ta), 29W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	D-PAK (TO-252)
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63

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