IRF5210LPBF

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Part No :

IRF5210LPBF

Manufacturer
IR (Infineon Technologies)
Description
MOSFET P-CH 100V 38A TO262
Catalog
Transistors - FETs, MOSFETs - Single
Shipped from
HK warehouse
Expected Shipping Date
Aug 20 - Aug 24 2025
DataSheet
IRF5210LPBF PDF
Availability
848 pieces
Unit Price
$2.52000

Current price of IRF5210LPBF is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

Type Description
Series:HEXFET®
Package:Tube
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:38A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:60mOhm @ 38A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:230 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2780 pF @ 25 V
FET Feature:-
Power Dissipation (Max):3.1W (Ta), 170W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-262
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
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  • Delivery date: usually 2 to 7 working days.
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