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SISA88DN-T1-GE3

SISA88DN-T1-GE3

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Part No :

SISA88DN-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 30V 16.2A/40.5A PPAK
Catalog
Transistors - FETs, MOSFETs - Single
Shipped from
HK warehouse
Expected Shipping Date
Jul 28 - Aug 01 2025
DataSheet
SISA88DN-T1-GE3 PDF
Availability
30300 pieces
Unit Price
$0.55000

Current price of SISA88DN-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

SISA88DN-T1-GE3 Specifications
Type Description
Series:TrenchFET® Gen IV
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:16.2A (Ta), 40.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:6.7mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:25.5 nC @ 10 V
Vgs (Max):+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds:985 pF @ 15 V
FET Feature:-
Power Dissipation (Max):3.2W (Ta), 19.8W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerPAK® 1212-8
Package / Case:PowerPAK® 1212-8
  • Please confirm the specifications of the products when ordering.
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped. (It may take up to 24 hours before carriers display the info.)
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