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SIHU3N50D-GE3

SIHU3N50D-GE3

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Part No :

SIHU3N50D-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 500V 3A TO251
Catalog
Transistors - FETs, MOSFETs - Single
Shipped from
HK warehouse
Expected Shipping Date
Aug 16 - Aug 20 2025
DataSheet
SIHU3N50D-GE3 PDF
Availability
0 pieces
Unit Price
$0.37004

Current price of SIHU3N50D-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

SIHU3N50D-GE3 Specifications
Type Description
Series:-
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:3.2Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:12 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:175 pF @ 100 V
FET Feature:-
Power Dissipation (Max):69W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-251
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
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