BSC042NE7NS3GATMA1

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Part No :: BSC042NE7NS3GATMA1

Manufacturer: IR (Infineon Technologies)

Description: MOSFET N-CH 75V 19A/100A TDSON

Catalog: Transistors - FETs, MOSFETs - Single

Shipped from: HK warehouse

Expected Shipping Date: Jul 27 - Jul 31 2025

DataSheet: BSC042NE7NS3GATMA1 PDF

Availability: 9991 pieces

Unit Price: ~~$2.67000~~

Current price of BSC042NE7NS3GATMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

BSC042NE7NS3GATMA1 Specifications

Type	Description
Series:	OptiMOS™
Package:	Tape & Reel (TR)Cut Tape (CT)
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	75 V
Current - Continuous Drain (Id) @ 25°C:	19A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	4.2mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:	3.8V @ 91µA
Gate Charge (Qg) (Max) @ Vgs:	69 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	4800 pF @ 37.5 V
FET Feature:	-
Power Dissipation (Max):	2.5W (Ta), 125W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	PG-TDSON-8-1
Package / Case:	8-PowerTDFN

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