IPP110N20NAAKSA1

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Part No :: IPP110N20NAAKSA1

Manufacturer: IR (Infineon Technologies)

Description: MOSFET N-CH 200V 88A TO220-3

Catalog: Transistors - FETs, MOSFETs - Single

Shipped from: HK warehouse

Expected Shipping Date: May 21 - May 25 2024

DataSheet: IPP110N20NAAKSA1 PDF

Availability: 990 pieces

Unit Price: ~~$8.49000~~

Due to the large price fluctuation in 2021-2022, please send an inquiry to get the latest quotation, The current price of IPP110N20NAAKSA1 is for reference only, if you want to get the best price, please submit an inquiry or email directly to our sales team [email protected]

IPP110N20NAAKSA1 Specifications

Type	Description
Series:	OptimWatt™
Package:	Tube
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	200 V
Current - Continuous Drain (Id) @ 25°C:	88A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	10.7mOhm @ 88A, 10V
Vgs(th) (Max) @ Id:	4V @ 270µA
Gate Charge (Qg) (Max) @ Vgs:	87 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	7100 pF @ 100 V
FET Feature:	-
Power Dissipation (Max):	300W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	PG-TO220-3
Package / Case:	TO-220-3

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