IPP110N20NAAKSA1

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Part No :: IPP110N20NAAKSA1

Manufacturer: IR (Infineon Technologies)

Description: MOSFET N-CH 200V 88A TO220-3

Catalog: Transistors - FETs, MOSFETs - Single

Shipped from: HK warehouse

Expected Shipping Date: Jul 01 - Jul 05 2025

DataSheet: IPP110N20NAAKSA1 PDF

Availability: 990 pieces

Unit Price: ~~$8.49000~~

Current price of IPP110N20NAAKSA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

IPP110N20NAAKSA1 Specifications

Type	Description
Series:	OptimWatt™
Package:	Tube
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	200 V
Current - Continuous Drain (Id) @ 25°C:	88A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	10.7mOhm @ 88A, 10V
Vgs(th) (Max) @ Id:	4V @ 270µA
Gate Charge (Qg) (Max) @ Vgs:	87 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	7100 pF @ 100 V
FET Feature:	-
Power Dissipation (Max):	300W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	PG-TO220-3
Package / Case:	TO-220-3

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