SI5414DC-T1-GE3

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Part No :: SI5414DC-T1-GE3

Manufacturer: Vishay / Siliconix

Description: MOSFET N-CH 20V 6A 1206-8

Catalog: Transistors - FETs, MOSFETs - Single

Shipped from: HK warehouse

Expected Shipping Date: Jul 29 - Aug 02 2025

DataSheet: SI5414DC-T1-GE3 PDF

Availability: 0 pieces

Unit Price: ~~$0.30305~~

Current price of SI5414DC-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

SI5414DC-T1-GE3 Specifications

Type	Description
Series:	TrenchFET®
Package:	Tape & Reel (TR)
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	20 V
Current - Continuous Drain (Id) @ 25°C:	6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	2.5V, 4.5V
Rds On (Max) @ Id, Vgs:	17mOhm @ 9.9A, 4.5V
Vgs(th) (Max) @ Id:	1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	41 nC @ 10 V
Vgs (Max):	±12V
Input Capacitance (Ciss) (Max) @ Vds:	1500 pF @ 10 V
FET Feature:	-
Power Dissipation (Max):	2.5W (Ta), 6.3W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	1206-8 ChipFET™
Package / Case:	8-SMD, Flat Lead

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