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SISS80DN-T1-GE3

SISS80DN-T1-GE3

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Part No :

SISS80DN-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 20V 58.3A/210A PPAK
Catalog
Transistors - FETs, MOSFETs - Single
Shipped from
HK warehouse
Expected Shipping Date
Jul 09 - Jul 13 2025
DataSheet
SISS80DN-T1-GE3 PDF
Availability
6040 pieces
Unit Price
$1.75000

Current price of SISS80DN-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

SISS80DN-T1-GE3 Specifications
Type Description
Series:TrenchFET® Gen IV
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:58.3A (Ta), 210A (Tc)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 10V
Rds On (Max) @ Id, Vgs:0.92mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:122 nC @ 10 V
Vgs (Max):+12V, -8V
Input Capacitance (Ciss) (Max) @ Vds:6450 pF @ 10 V
FET Feature:-
Power Dissipation (Max):5W (Ta), 65W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerPAK® 1212-8S
Package / Case:PowerPAK® 1212-8S
  • Please confirm the specifications of the products when ordering.
  • MOQ means the minimum order quantity required to purchase each parts.
  • If you have special order instructions,please note it on the ordering pages.
  • The Pre-Shipment Inspection (PSI) will be applied.
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped. (It may take up to 24 hours before carriers display the info.)
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