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RQ3L050GNTB

RQ3L050GNTB

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Part No :

RQ3L050GNTB

Manufacturer
ROHM Semiconductor
Description
MOSFET N-CHANNEL 60V 12A 8HSMT
Catalog
Transistors - FETs, MOSFETs - Single
Shipped from
HK warehouse
Expected Shipping Date
Jul 20 - Jul 24 2025
DataSheet
RQ3L050GNTB PDF
Availability
9 pieces
Unit Price
$0.75000

Current price of RQ3L050GNTB is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

RQ3L050GNTB Specifications
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:12A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:61mOhm @ 5A, 10V
Vgs(th) (Max) @ Id:2.5V @ 25µA
Gate Charge (Qg) (Max) @ Vgs:2.8 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:300 pF @ 30 V
FET Feature:-
Power Dissipation (Max):14.8W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-HSMT (3.2x3)
Package / Case:8-PowerVDFN
  • Please confirm the specifications of the products when ordering.
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  • If you have special order instructions,please note it on the ordering pages.
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped. (It may take up to 24 hours before carriers display the info.)
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