SCTW70N120G2V

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Part No :

SCTW70N120G2V

Manufacturer
STMicroelectronics
Description
TRANS SJT N-CH 1200V 91A HIP247
Catalog
Transistors - FETs, MOSFETs - Single
Shipped from
HK warehouse
Expected Shipping Date
Aug 14 - Aug 18 2025
DataSheet
SCTW70N120G2V PDF
Availability
0 pieces
Unit Price
$38.32000

Current price of SCTW70N120G2V is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

Type Description
Series:-
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):1200 V
Current - Continuous Drain (Id) @ 25°C:91A (Tc)
Drive Voltage (Max Rds On, Min Rds On):18V
Rds On (Max) @ Id, Vgs:30mOhm @ 50A, 18V
Vgs(th) (Max) @ Id:4.9V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:150 nC @ 18 V
Vgs (Max):+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds:3540 pF @ 800 V
FET Feature:-
Power Dissipation (Max):547W (Tc)
Operating Temperature:-55°C ~ 200°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:HiP247™
Package / Case:TO-247-3
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