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Type | Description |
---|---|
Series: | GigaMOS™, TrenchT2™ |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 75 V |
Current - Continuous Drain (Id) @ 25°C: | 500A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 1.6mOhm @ 100A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 8mA |
Gate Charge (Qg) (Max) @ Vgs: | 545 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 41000 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 830W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 24-SMPD |
Package / Case: | 24-PowerSMD, 21 Leads |
4" RING LIGHT MODULE
CRYSTAL 48.0000MHZ 10PF SMD
MOSFET N-CH 75V 500A 24SMPD
BOARD TO BOARD