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FQU11P06TU

FQU11P06TU

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Part No :

FQU11P06TU

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET P-CH 60V 9.4A IPAK
Catalog
Transistors - FETs, MOSFETs - Single
Shipped from
HK warehouse
Expected Shipping Date
May 21 - May 25 2024
DataSheet
FQU11P06TU PDF
Availability
6013 pieces
Unit Price
$0.91000

Due to the large price fluctuation in 2021-2022, please send an inquiry to get the latest quotation, The current price of FQU11P06TU is for reference only, if you want to get the best price, please submit an inquiry or email directly to our sales team [email protected]

FQU11P06TU Specifications
Type Description
Series:QFET®
Package:Tube
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:9.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:185mOhm @ 4.7A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:17 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:550 pF @ 25 V
FET Feature:-
Power Dissipation (Max):2.5W (Ta), 38W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I-PAK
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
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