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Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | SiCFET (Silicon Carbide) |
Drain to Source Voltage (Vdss): | 1700 V |
Current - Continuous Drain (Id) @ 25°C: | 3.7A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 18V |
Rds On (Max) @ Id, Vgs: | 1.5Ohm @ 1.1A, 18V |
Vgs(th) (Max) @ Id: | 4V @ 900µA |
Gate Charge (Qg) (Max) @ Vgs: | 14 nC @ 18 V |
Vgs (Max): | +22V, -6V |
Input Capacitance (Ciss) (Max) @ Vds: | 184 pF @ 800 V |
FET Feature: | - |
Power Dissipation (Max): | 35W (Tc) |
Operating Temperature: | 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-3PFM |
Package / Case: | TO-3PFM, SC-93-3 |
SICFET N-CH 1700V 3.7A TO3PFM
SENSOR ELECTRON DETECTION 100MM
RH+T+PRESS. TWO RELAY AND RS485
IC FIFO SYNC II 3.3V 80-TQFP