FQPF7N80C

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Part No :: FQPF7N80C

Manufacturer: Sanyo Semiconductor/ON Semiconductor

Description: MOSFET N-CH 800V 6.6A TO220F

Catalog: Transistors - FETs, MOSFETs - Single

Shipped from: HK warehouse

Expected Shipping Date: Jul 30 - Aug 03 2025

DataSheet: FQPF7N80C PDF

Availability: 865 pieces

Unit Price: ~~$2.21000~~

Current price of FQPF7N80C is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

FQPF7N80C Specifications

Type	Description
Series:	QFET®
Package:	Tube
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	800 V
Current - Continuous Drain (Id) @ 25°C:	6.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	1.9Ohm @ 3.3A, 10V
Vgs(th) (Max) @ Id:	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	35 nC @ 10 V
Vgs (Max):	±30V
Input Capacitance (Ciss) (Max) @ Vds:	1680 pF @ 25 V
FET Feature:	-
Power Dissipation (Max):	56W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	TO-220F
Package / Case:	TO-220-3 Full Pack

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