IPW65R037C6FKSA1

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Part No :: IPW65R037C6FKSA1

Manufacturer: IR (Infineon Technologies)

Description: MOSFET N-CH 650V 83.2A TO247-3

Catalog: Transistors - FETs, MOSFETs - Single

Shipped from: HK warehouse

Expected Shipping Date: Aug 09 - Aug 13 2025

DataSheet: IPW65R037C6FKSA1 PDF

Availability: 376 pieces

Unit Price: ~~$15.94000~~

Current price of IPW65R037C6FKSA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

IPW65R037C6FKSA1 Specifications

Type	Description
Series:	CoolMOS™ C6
Package:	Tube
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	650 V
Current - Continuous Drain (Id) @ 25°C:	83.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	37mOhm @ 33.1A, 10V
Vgs(th) (Max) @ Id:	3.5V @ 3.3mA
Gate Charge (Qg) (Max) @ Vgs:	330 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	7240 pF @ 100 V
FET Feature:	-
Power Dissipation (Max):	500W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	PG-TO247-3
Package / Case:	TO-247-3

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