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GA100JT12-227

GA100JT12-227

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Part No :

GA100JT12-227

Manufacturer
GeneSiC Semiconductor
Description
TRANS SJT 1200V 160A SOT227
Catalog
Transistors - FETs, MOSFETs - Single
Shipped from
HK warehouse
Expected Shipping Date
Aug 07 - Aug 11 2025
DataSheet
GA100JT12-227 PDF
Availability
0 pieces
Unit Price
$0.00000

Current price of GA100JT12-227 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

GA100JT12-227 Specifications
Type Description
Series:-
Package:Tube
Part Status:Obsolete
FET Type:-
Technology:SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss):1200 V
Current - Continuous Drain (Id) @ 25°C:160A (Tc)
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:10mOhm @ 100A
Vgs(th) (Max) @ Id:-
Gate Charge (Qg) (Max) @ Vgs:-
Vgs (Max):-
Input Capacitance (Ciss) (Max) @ Vds:14400 pF @ 800 V
FET Feature:-
Power Dissipation (Max):535W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Chassis Mount
Supplier Device Package:SOT-227
Package / Case:SOT-227-4, miniBLOC
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