IRF1010EL

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Part No :

IRF1010EL

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 60V 84A TO262
Catalog
Transistors - FETs, MOSFETs - Single
Shipped from
HK warehouse
Expected Shipping Date
Aug 04 - Aug 08 2025
DataSheet
IRF1010EL PDF
Availability
0 pieces
Unit Price
$0.00000

Current price of IRF1010EL is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

Type Description
Series:HEXFET®
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:84A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:12mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:130 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3210 pF @ 25 V
FET Feature:-
Power Dissipation (Max):200W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-262
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
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