STB11NM60-1

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Part No :: STB11NM60-1

Manufacturer: STMicroelectronics

Description: MOSFET N-CH 650V 11A I2PAK

Catalog: Transistors - FETs, MOSFETs - Single

Shipped from: HK warehouse

Expected Shipping Date: Aug 08 - Aug 12 2025

DataSheet: STB11NM60-1 PDF

Availability: 0 pieces

Unit Price: ~~$0.00000~~

Current price of STB11NM60-1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

STB11NM60-1 Specifications

Type	Description
Series:	MDmesh™
Package:	Tube
Part Status:	Obsolete
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	650 V
Current - Continuous Drain (Id) @ 25°C:	11A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	450mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id:	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	30 nC @ 10 V
Vgs (Max):	±30V
Input Capacitance (Ciss) (Max) @ Vds:	1000 pF @ 25 V
FET Feature:	-
Power Dissipation (Max):	160W (Tc)
Operating Temperature:	-65°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	I2PAK
Package / Case:	TO-262-3 Long Leads, I²Pak, TO-262AA

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