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NP23N06YDG-E1-AY

NP23N06YDG-E1-AY

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Part No :

NP23N06YDG-E1-AY

Manufacturer
Renesas Electronics America
Description
MOSFET N-CH 60V 23A 8HSON
Catalog
Transistors - FETs, MOSFETs - Single
Shipped from
HK warehouse
Expected Shipping Date
Aug 13 - Aug 17 2025
DataSheet
NP23N06YDG-E1-AY PDF
Availability
0 pieces
Unit Price
$0.00000

Current price of NP23N06YDG-E1-AY is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

NP23N06YDG-E1-AY Specifications
Type Description
Series:-
Package:Tape & Reel (TR)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:23A (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:27mOhm @ 11.5A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:41 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1800 pF @ 25 V
FET Feature:-
Power Dissipation (Max):1W (Ta), 60W (Tc)
Operating Temperature:175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-HSON
Package / Case:8-SMD, Flat Lead Exposed Pad
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
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