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Type | Description |
---|---|
Series: | - |
Package: | Bulk |
Part Status: | Obsolete |
FET Type: | - |
Technology: | SiC (Silicon Carbide Junction Transistor) |
Drain to Source Voltage (Vdss): | 650 V |
Current - Continuous Drain (Id) @ 25°C: | 15A (Tc) (155°C) |
Drive Voltage (Max Rds On, Min Rds On): | - |
Rds On (Max) @ Id, Vgs: | 105mOhm @ 15A |
Vgs(th) (Max) @ Id: | - |
Gate Charge (Qg) (Max) @ Vgs: | - |
Vgs (Max): | - |
Input Capacitance (Ciss) (Max) @ Vds: | 1534 pF @ 35 V |
FET Feature: | - |
Power Dissipation (Max): | 172W (Tc) |
Operating Temperature: | -55°C ~ 225°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-257 |
Package / Case: | TO-257-3 |
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