DF200R12W1H3B27BOMA1

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Part No :: DF200R12W1H3B27BOMA1

Manufacturer: IR (Infineon Technologies)

Description: IGBT MOD 1200V 30A 375W

Catalog: Transistors - IGBTs - Modules

Shipped from: HK warehouse

Expected Shipping Date: Jun 30 - Jul 04 2025

DataSheet: DF200R12W1H3B27BOMA1 PDF

Availability: 0 pieces

Unit Price: ~~$54.61750~~

Current price of DF200R12W1H3B27BOMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

DF200R12W1H3B27BOMA1 Specifications

Type	Description
Series:	-
Package:	Bulk
Part Status:	Active
IGBT Type:	-
Configuration:	2 Independent
Voltage - Collector Emitter Breakdown (Max):	1200 V
Current - Collector (Ic) (Max):	30 A
Power - Max:	375 W
Vce(on) (Max) @ Vge, Ic:	1.3V @ 15V, 30A
Current - Collector Cutoff (Max):	1 mA
Input Capacitance (Cies) @ Vce:	2 nF @ 25 V
Input:	Standard
NTC Thermistor:	Yes
Operating Temperature:	-40°C ~ 150°C
Mounting Type:	Chassis Mount
Package / Case:	Module
Supplier Device Package:	Module

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