FS50R07N2E4BOSA1

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Part No :

FS50R07N2E4BOSA1

Manufacturer
IR (Infineon Technologies)
Description
IGBT MODULE 650V 70A 190W
Catalog
Transistors - IGBTs - Modules
Shipped from
HK warehouse
Expected Shipping Date
Jul 01 - Jul 05 2025
DataSheet
FS50R07N2E4BOSA1 PDF
Availability
0 pieces
Unit Price
$0.00000

Current price of FS50R07N2E4BOSA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

Type Description
Series:-
Package:Tray
Part Status:Obsolete
IGBT Type:-
Configuration:Full Bridge Inverter
Voltage - Collector Emitter Breakdown (Max):650 V
Current - Collector (Ic) (Max):70 A
Power - Max:190 W
Vce(on) (Max) @ Vge, Ic:1.95V @ 15V, 50A
Current - Collector Cutoff (Max):1 mA
Input Capacitance (Cies) @ Vce:3.1 nF @ 25 V
Input:Standard
NTC Thermistor:Yes
Operating Temperature:-40°C ~ 125°C
Mounting Type:Chassis Mount
Package / Case:Module
Supplier Device Package:Module
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  • Delivery date: usually 2 to 7 working days.
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